Marka:
Samsung
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:Storage Memory: V-NAND 3-bit MLC; Samsung in-house Controller; Cache Memory: 1GB Low Power DDR4 SDRAM
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:Лаптопи
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:80 x 24.3 x 8.2 mm (with heatsink)
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:Max 28 g
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:2 000 GB (2 TB)
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:Up to 7450 MB/s
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:Up to 6900 MB/s
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:Internal
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:PCIe Gen 4.0 x4, NVMe 2.0
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:N/A
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:M.2 (2280)
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:60